Micron Technology DRAM SDRAM-DDR3L, Part #: MT53E256M32D2DS-046 AIT:B TR | Dynamic random access memory | DEX digital isolator Part #: MT40A256M16LY-062E:F features: •

Part #: MT40A256M16LY-062E:F features: • VDD = VDDQ = 1

fuse bracket

SDK:SDCZ430-064G-A46

The TS512B is guaranteed with a higher minimum slew rate (1

Micron Technology DRAM SDRAM-DDR3L, Part #: MT53E256M32D2DS-046 AIT:B TR | Dynamic random access memory | DEX digital isolator Part #: MT40A256M16LY-062E:F features: •Micron Technology DRAM SDRAMMobile , Part #: MT53E256M32D2DS 046 AIT: B TR features: Ultra low voltage core and I O power supplies VDD1 = 1. 701. 95V; 1. 80V nominal VDD2 = 1. 061. 17V; 1. 10V nominal VDDQ = 1. 061. 17V; 1. 10V nominal or Low VDDQ = 0. 570. 65V; 0. 60V nominal Frequency range 213310 MHz (data rate range: 426620 Mb s pin) 16n prefetch DDR architecture 8 internal banks per channel for concurrent operation Single data rate CMD ADR entry